3 edition of Planar double-gate transistor found in the catalog.
Planar double-gate transistor
Published
2009
by Springer in [Dordrecht?]
.
Written in English
Edition Notes
Includes bibliographical references and index.
| Statement | Amara Amara, Olivier Rozeau, editors. |
| Contributions | Amara, Amara., Rozeau, Olivier. |
| Classifications | |
|---|---|
| LC Classifications | TK7871.95 .P54 2009 |
| The Physical Object | |
| Pagination | viii, 211 p. : |
| Number of Pages | 211 |
| ID Numbers | |
| Open Library | OL24073203M |
| ISBN 10 | 9781402093272, 9781402093418 |
| LC Control Number | 2008939918 |
planar device consuming the same chip arca. Note, though, that the FinFET gives twice the current per unit width because of its double-gate nature. Thus, the break-even point in terms of cur- rent is when the fin pitch is twice the fin height. Figure also illustrates how fin pitch can be half the lithography piteh hy using. Amara Amara, Olivier Rozeau, Planar Double-Gate Transistor: From Technology to Circuit, Springer,
The design we present here, a double-gate (DG) device with a high-κ gate dielectric, is a way of achieving similar improvements (with an ON-current of mA, lower than the ITRS requirement, but an OFF-current sig-nifi cantly reduced compared to a conventional MOSFET), while taking advantage of the reduced subthreshold. However, the double-gate transistor requires printing the fin width (T Si) 30% smaller than the transistor gate length (Lg). This makes the double-gate transistor not practical to fabricate since the most critical lithography step in fabricating the double-gate transistor is no longer the transistor gate patterning, but the fin patterning.
Double-Gate MOSFETs Kavitha Ramasamy, Cristina Crespo Portland State University ECE – Winter One such structure is the Double-Gate Transistor, proposed in the s. Other possible solutions include SOI devices, planar, vertical, and FinFET. The dual gate MOSFET is a useful form of MOSFET which can provide some distinct advantages, especially in RF applications. The dual gate MOSFET can be considered in the same light as the tetrode vacuum tube or thermionic valve. The introduction of the second control electrode considerably reduced the level of feedback capacitance between the.
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Classed intersections
Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub nm technological nodes as planned by the current ITRS Roadmap. The book topics are mainly focusing on.
Download Citation | Planar Double-Gate Transistor - From Technology to Circuit | This book on Double-Gates devices and circuit is unique and aims.
Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub nm technological nodes as planned by the current ITRS Roadmap.
The book topics are mainly focusing on:Format: Hardcover. Get this from a library. Planar double-gate transistor: from technology to circuit. [Amara Amara; Olivier Rozeau;] -- This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS subnm devices and the design of elementary circuits.
The goal is. FinFET (fin field-effect transistor) is a type of non-planar transistor, or "3D" transistor (not to be confused with 3D microchips). The FinFET is a variation on traditional MOSFETs distinguished by the presence of a thin silicon "fin" inversion channel on top of the substrate, allowing the gate to make two points of contact: the left and right sides of the fin.
A new planar split dual gate (PSDG) MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle.
FIG. (a) Schematics and (b) scanning electron micrograph of a planar double gate quantum wire transistor that has a wire gate placed inside the gap of a split gate. The wire gate is 30 nm wide.
The split gate has a length of pm and a gap width of pm. Appl. Phys. Lett. Double-Gate FET Scale length: Structure: Ground-Plane FET Source Drain Energy Band Profile: (OFF State) longer R.‐H. Yan et al., IEEE Trans. Electron Devices, Vol.
39, pp. ‐, • t Si is a critical design parameter. tunneling. Then Vertical tunnel field effect transistor is demonstrated by Bhuwalka and shows its utility as a Nano scale alternative device. Double gate tunnel Field effect transistor (DGTFET) is considered to increase the tunneling current as two tunneling junctions are formed.
Low sub threshold swing and high 𝐼Author: Ravish Gupta, Ravi Mohan, Divyanshu Rao. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure.
These devices have been given the generic name "finfets" because the source/drain region forms fins on the silicon. The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to.
Double Gate SOI-MOSFETs are attractive candidates for meeting the requirements of the devices miniaturization. The silicon film thickness, t si being an extra scaling parameter in these devices, offers an additional degree of freedom for threshold voltage adjustment, through the back-gate voltage V bg [1] thereby controlling the short channel effect (SCE) by: CMOS Technology Scaling • Gate length has not scaled proportionately with device pitch (x per generation) in recent generations.
– Transistor performance has been boosted by other means. 90 nm node 65 nm node 45 nm node 32 nm node T. Ghani et al., IEDM K. Mistryet al., IEDM P. Packan et al., IEDM XTEM images with the same scale. Layout • Type I: Planar Double Gate • Type II: Vertical Double Gate • Type III: Horizontal Double Gate (FinFET) Reduced Channel and Gate Leakage • Short channel effects are seen in Standard silicon MOS devices • DGFET offers greater control of the channel because of the double gate • Gate leakage current is prevented by a thick.
Ian O'Connor's Homepage. Mieyeville, M. Brière, I. O'Connor, F. Gaffiot, G. Jacquemod, "A VHDL-AMS library of hierarchical optoelectronic device models, " in. Transistors Books Browse New & Used Transistors Books.
Results 1 - 50 of for Transistors Books How to gain gain: A Reference Book on Triodes in Audio Pre-Amps by Vogel, Burkhard ISBN: List Price: $ Planar Double-Gate Transistor: From Technology to Circuit by Amara, Amara, Rozeau. A planar double gate quantum wire transistor (QWT) is proposed and demonstrated.
The transistor uses a narrow wire gate placed inside the gap of a split gate to create a single one‐dimensional (1D) quantum wire (QW). We demonstrate theoretically and experimentally that the wire gate can create a QW potential with a better confinement and therefore larger Cited by: 9.
Numerical Simulation of a Planar Nanoscale DG n-MOSFET: ATLAS, Numerical Analysis [Ahlam Guen] on *FREE* shipping on qualifying offers. the predictable decrease of transistors sizes which is nowadays close to the atomistic dimension leads today to nanoscale devices. Double gate MOSFETs are considered to be one of the most promising candidates.
FinFET Last updated Octo A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure.
These devices have. [] R., Baruah and R., Paily, “Double-gate junctionless transistor for low power digital applications,” Emerging Trends and Applications in Computer Science (ICETACS), 1st International Conference on, Shillong, India, pp. 23–6, September A double-gate MOSFET was first demonstrated in by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi.
FinFET (fin field-effect transistor), a type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in The term “FINFET” describes a non-planar, double gate transistor built on an SOI substrate, based on the single gate transistor design.
The important characteristics of FINFET is that the conducting channel is wrapped by a thin Si “fin”, which forms the body of the device. The thickness of the fin determines the effective channel length.
